Researchers from Imec fabricated spin-orbit torque MRAM (SOT-MRAM) devices on 300mm wafers using CMOS compatible processes. The researchers say that these devices offer unlimited endurance, fast switching speeds and low power consumption.
Imec says that SOT-MRAM can overcome the limitation of spin-transfer torque in MRAM memories, but up until now it was only demonstrated in a lab. The core of the SOT-MRAM is a magnetic tunnel junction in which a thin dielectric layer is sandwiched between a magnetic fixed layer and a magnetic free layer. SOT-MRAM devices feature switching of the free magnetic layer done by injecting an in-plane current in an adjacent SOT layer, unlike STT-MRAM where the current is injected perpendicularly into the magnetic tunnel junction and the read and write operation is performed through the same path.