MRAM-Info: the MRAM experts

MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies.

MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in a single chip.

Recent MRAM News

Researchers show how antiferromagnetic STT-MRAM technology can enable higher-density and lower energy memory

Researchers from Northwestern University suggest building STT-MRAM devices from antiferromagnetic materials - as opposed to the currently-used ferromagnetic ones. The researchers say that these materials will enable higher-density devices that feature high speed writing with low currents.

Antiferromagnetic materials are magnetically ordered at the microscopic scale, but not at the macroscopic scale. This means that there is no magnetic force between adjacent bits in MRAM cells built from these materials - which means you can pack them very close together.

Researchers demonstrate that chalcogenide materials can be highly suitable for SOT-MRAM

Researchers from National Taiwan University demonstrate that chalcogenide material BiTe with non-epitaxial structure can give rise to a giant spin Hall ratio and SOT efficiency (~ 200%) without obvious evidence of topologically-protected surface state (TSS).

BiTe material system for SOT-MRAM schema (NUS)

The researchers explain that a clear thickness-dependent increase of the SOT efficiency indicates that the origin of this effect is from the bulk spin-orbit interaction of such materials system. Efficient current-induced switching through SOT is also demonstrated with a low zero-thermal critical switching current density (~ 6×105 A/cm2).

Hprobe raises over 2 million Euros to support its MRAM device testing equipment development

Hprobe, a developer of testing equipment for magnetic devices, has raised more than 2 million euros from a group of international investors. The new funds will support Hprobe's spintronics device testing development - which include MRAM and TMR sensors.

Hprobe wafer prober system photo

The investment round was led by Germany-based High-Tech Gründerfonds (HTGF), a public-private venture capital investment firm. Other investors include Taiwan ITRI's ITIC VC firm and TEL Venture Capital.

Objective Reports: the emerging memory market to reach $20 billion in revenues by 2029

Objective Analysis and Coughlin Associates say that the emerging memory market will reach $20 billion in revenues by 2029, which will boost the emerging memory manufacturing equipment market to $854 million in revenues.

MRAM capacity shipments forecast (2017-2029, Coughlin)

According to the "Emerging Memories Ramp Up" report, offered by Objective and Coughlin, the market will grow by displacing the currently used NOR flash and SRAM memories which are less efficient - and will also displace a share of the DRAM market. Emerging memories will be used both as standalone memory chips and as embedded memories within other chips (such as microcontrollers, ASICs, and even compute processors). Future process shrinks and improved economies of scale will drive down prices, which will allow emerging memories to compete more effectively against today’s most popular volatile and nonvolatile technologies.

Everspin announced a restructuring plan to reduced expense and achieve breakeven in 2020

Everspin Technologies announced that the company will undergo a restructuring plan designed to reduce annual operating expenditures and achieve quarterly cash flow breakeven this year. At the end of January the company will reduce its headcount - an approximately 15% reduction of the workforce.

Everspin 1Gb STT-MRAM chip photo

Everspin also announced that it reaffirms its Q4 2019 revenue guidance of $9.3 million to $9.7 million.

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Whether its saying hello to longtime acquaintances or discovering new companies we have not yet heard of - this relationship can bear fruit of many kinds! So - MRAM professionals - we are waiting for your email, website comment or contact form!