MRAM-Info: the MRAM experts

MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies.

MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in a single chip.

Recent MRAM News

Everspin announces its Q3 2019 financial results

Everspin Technologies announced its financial results for Q3 2019 - with revenues of $9.2 million (down from $11.5 million in Q3 2018) and a net loss of $3.7 million (down from $5.6 million in Q3 2018). Everspin says that it achieved record STT-MRAM revenues.

Everspin Technologies chip photo

At the end of the quarter, Everspin had $14.8 million in cash and equivalents. For the next quarter, it expects revenues to be between $9.3 million and $9.7 million.

Everspin expands its toggle-MRAM product portfolio, now offers 32Mb devices

Everspin Technologies announced that it has expanded its Toggle MRAM product portfolio, adding 2Mb, 8Mb and 32Mb capacities. Everspin's previous largest capacity Toggle MRAM was 16Mb, so the company now offers double the capacity to enable applications such as configuration storage, setup and data logging in embedded systems and more.

Everspin 128Kb automotive MRAM photo

Everspin's new 8Mb and 32Mb memory devices are currently sampling and production will begin in Q1 2020. The 2Mb device will start sampling by the end of 2019, and production will also begin in Q1 2020.

Hprobe says first MRAM tester qualified by a major foundry in Taiwan for production use

Hprobe, a developer of testing equipment for magnetic devices, says its first Hprobe MRAM tester was qualified for use by a major Taiwan-based foundry for production use. Hprobe says that this is an important milestone and the company believes it is just the beginning of the global MRAM production ramp up.

Hprobe wafer prober system photo

Hprobe recently announced that it developed a new technology for ultra-fast (<1 second) testing of STT magnetic tunnel junctions under perpendicular magnetic field at above 2 Tesla.

Everspin and Seagate announce an IP patent assignment and licensing agreement

Everspin Technologies announced that it has signed an IP cross-licensing agreement with Seagate Technology. Everspin will license specific Tunneling Magnetoresistance (TMR) patents to Seagate, while Seagate will license MRAM patents to Everspin.

Everspin Technologies chip photo

Everspin says its IP portfolio is now stronger which will provide further protection to for its products and services, while Seagate will gain license to TMR IP which can be used in HDD head technology.

IBM to use Everspin's 1Gb STT-MRAM in its next-gen FlashCore modules

In August 2018 IBM announced that it adopted Everspin's 256Mb STT-MRAM chips in its enterprise SSD FlashSystem. Now IBM announced that it's latest FlashCore modules will use Everspins 1Gb STT-MRAM chips.

Everspin 1Gb STT-MRAM chip photo
Using MRAM instead of DRAM memory enabled IBM to remove the relatively large supercapacitors (used to make the DRAM non-volatile) and so the company was able to reduced the size of its drives and switch to a standard 2.5-inch U.2 drive form factor.

Cadence to offer design and verification support for Everspin's 1Gb STT-MRAM

Everspin Technologies announced that Cadence Design is now providing DDR4 Design IP (DIP) and Verification IP (VIP) support for Everspin’s 1 Gb STT-MRAM memory. Cadence has supported Everspin's STT-MRAM products since 2012. Everspin customers will now be able to request 1Gb MRAM-enabled IP and VIP for their Custom ASIC solutions.

Everspin Technologies chip photo

Everspin’s 1 Gb STT-MRAM product family includes both 8bit and 16-bit DDR4 compatible (ST-DDR4) interface versions of the device and are available in a JEDEC-compliant BGA package.

Hprobe developed an ultra-fast technology for STT-MRAM device testing

Hprobe, a developer of testing equipment for magnetic devices, announced that it developed a new technology for ultra-fast (<1 second) testing of STT magnetic tunnel junctions under perpendicular magnetic field at above 2 Tesla.

Hprobe wafer prober system photo

Hprobe will integrate the new technology into its Hprobe ATE systems to drastically enhance the sorting flow of STT-MRAM wafers at major 300mm foundries.